Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. Wydawnictwo: Springer Rok wydania: 2022 Okładka: miękka Liczba stron: 383 Wymiary: 23.5 x 15.5 cm Ilustracje: 186 Illustrations, black and white; VI, 383 p. 186 illus. Język: angielski ISBN: 9783030424268